dm n3009sfg document number: d s 36747 rev. 5 - 2 1 of 7 www.diodes.com september 2015 ? diodes incorporated d mn3009sfg advance information advanced information 30v n - channel enhancement mode mosfet p ower di ? product summary v (br)dss r ds(on) m ax i d m ax t c = + 25c 30v 5.5m ? @ v gs = 10 v 45 a 9m ? @ v gs = 4.5 v 30 a description and applications this mosfet is designed to minimize the on - state resistance (r ds( on) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? power m anagement f unctions ? dc - dc converters ? battery features and benefits ? low on - resistance ? low input capacitance ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproximate ) ordering information (note 4 ) part number case packaging dm n30 0 9 s fg - 7 p ower di 3333 - 8 2 , 0 00 /tape & reel dm n30 09 s fg - 13 p ower di 3333 - 8 3 , 000 /tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : // www.diodes.com/products/packages.html . marking information top view bottom view powerdi 3333 - 8 n09 = product type marking code yyww = date code marking yy = last digit of year (ex: 1 5 = 201 5) ww = week code (01 to 53) equivalent circuit n 09 y yww powerdi is a registered trademark of diodes incorporated . s s s g d d d d pin 1 green
dm n3009sfg document number: d s 36747 rev. 5 - 2 2 of 7 www.diodes.com september 2015 ? diodes incorporated d mn3009sfg advance information advanced information maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current , v gs = 10 v (note 6 ) t a = +25c t a = +70c i d 16 13.6 a t a = + 70 c t a = +70c 13 13.6 t c = +25c t a = +70c i d 45 a t c = + 70 c t a = +70c 35 pulsed drain curren t ( 380 dm 80 a maximum continuous body diode f orward current (note 6 ) i s 20 13.6 a avalanche current, l = 0.1mh i as 33 a avalanche energy, l = 0.1mh e as 55 13.6 mj thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = + 25 c p d 0.9 w t a = + 70 c 0.6 thermal resistance, junction to ambient (note 5 ) r ja a = + 25 c p d 2.1 w t a = + 70 c 1.4 thermal resistance, junction to ambient (note 6 ) steady state r ja j c 7.8 c/w operating and storage temperature range t j, t stg - 55 to + 150 c e lectrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 30 gs = 0v, i d = 250a dss ds = 24 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) 1 ds = v gs , i d = 250 a ds(on) ? gs = 10 v, i d = 20 a gs = 4 .5v, i d = 16 a diode forward voltage v sd gs = 0v, i s = 1a dynamic characteristics (note 7 ) input capacitance c iss ds = 1 5 v, v gs = 0v , f = 1mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 15 v, i d = 15 a total gate charge ( v gs = 10 v ) q g gs gd d( on ) dd = 15 v, v gs = 10 v, r g = 3.3 ? d = 15 a turn - on rise time t r d( off ) f rr f = 15 a, di/dt = 1 00a/s rr notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . short duration pulse test used to minimize self - heating effect.
dm n3009sfg document number: d s 36747 rev. 5 - 2 3 of 7 www.diodes.com september 2015 ? diodes incorporated d mn3009sfg advance information advanced information 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =2.0v v gs =2.5v v gs =3.0v v gs =4.0v v gs =4.5v v gs =10.0v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5 v - 55 25 85 150 125 0 0.004 0.008 0.012 0.016 0.02 0 4 8 12 16 20 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =15a 0.002 0.0025 0.003 0.0035 0.004 0.0045 0.005 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =4.5v v gs =10v 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs =4.5v, i d =15a v gs =10v, i d =30a 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain current(a) figure 5. typical on - resistance vs. drain current and temperature v gs = 4.5v 150 - 55 25 85 125
dm n3009sfg document number: d s 36747 rev. 5 - 2 4 of 7 www.diodes.com september 2015 ? diodes incorporated d mn3009sfg advance information advanced information 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs =4.5v, i d =15a v gs =10v, i d =30a 0.2 0.5 0.8 1.1 1.4 1.7 2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 i dss , leakage current (na) v ds , drain - source voltage (v) figure 10. typical drain - source leakage current vs. voltage 25 85 125 150 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t a = - 55 v gs =0v, t a =25 v gs =0v, t a =85 v gs =0v, t a =150 v gs =0v, t a =125 100 1000 10000 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 11. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 v gs (v) qg (nc) figure 12. gate charge v ds =15v, i d =15a
dm n3009sfg document number: d s 36747 rev. 5 - 2 5 of 7 www.diodes.com september 2015 ? diodes incorporated d mn3009sfg advance information advanced information 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 14. transient thermal resistance r ja (t)=r(t) * r ja r ja =137 /w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 13. soa, safe operation area t j(max) =150 t a =25 single pulse dut on 1*mrp board v gs =10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm n3009sfg document number: d s 36747 rev. 5 - 2 6 of 7 www.diodes.com september 2015 ? diodes incorporated d mn3009sfg advance information advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi 3333 - 8 powerdi3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? ? ? 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? 0.65 e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. powerdi3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) x3 y3 x y c y1 y2 x1 x2 1 8
dm n3009sfg document number: d s 36747 rev. 5 - 2 7 of 7 www.diodes.com september 2015 ? diodes incorporated d mn3009sfg advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effective ness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related r equirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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